BLC9G21LS-60AVZ

Overview

The BLC9G21LS-60AVZ is a dual N-channel LDMOS power transistor designed for base station applications in the 1805 MHz to 2200 MHz frequency range. It features an asymmetric Doherty architecture with a peak output power of 60 W and a typical gain of 17.5 dB at 28 V drain-source voltage. The device operates within a junction temperature limit of +225 °C and utilizes an SOT1275-1 air cavity plastic earless flanged package. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage of 2.5 V, and a thermal resistance from junction to case ranging from 0.92 K/W to 0.97 K/W depending on power levels.

Feature Summary

• Asymmetric design optimized for high efficiency across the operating band in Doherty configurations
• Low thermal resistance providing excellent thermal stability under continuous operation
• Internally matched structure to simplify circuit integration and reduce external component count
• Integrated electrostatic discharge (ESD) protection compliant with C2A and HBM Class 2 standards

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 2200 MHz frequency range
• Asymmetric Doherty amplifier architectures

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation before procurement. The 'Z' suffix indicates tray packaging, while 'Y' denotes reel packaging. Confirm that the selected variant matches the required manufacturing assembly process. Ensure compliance with RoHS Directive 2002/95/EC requirements as stated in the product data sheet.

Selection Notes

Select this component for designs requiring high ruggedness and low memory effects in digital pre-distortion environments. The internal matching reduces the need for complex input/output networks. Verify that the application can accommodate the SOT1275-1 flanged package dimensions and thermal management requirements for a maximum junction temperature of 225 °C.

Part Context

This part belongs to the BLC9G21LS series of LDMOS transistors manufactured by Ampleon. The series is engineered specifically for cellular infrastructure, offering robust performance in multi-carrier scenarios. The device represents a specialized solution for optimizing efficiency in asymmetric power amplifier topologies used in modern wireless communication systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Ampleon directly for qualified alternatives or cross-reference options.