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The BLC9G22LS-160VT is a 160 W LDMOS power transistor designed for base station applications operating between 2110 MHz and 2200 MHz. It features an air cavity plastic earless flanged package (SOT1271-2) with six leads. The device operates at a drain-source voltage of 28 V, delivering typical average output power of 35 W in class-AB operation with 18.4 dB gain and 33% drain efficiency. Key electrical parameters include a maximum drain-source breakdown voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.47 K/W.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct packaging and handling specifications. Confirm RoHS compliance status prior to final procurement decisions. Ensure all technical requirements align with the provided product data sheet specifications before placing orders.
Select this component for high-efficiency RF power amplification in cellular infrastructure. Evaluate thermal management capabilities given the 0.47 K/W junction-to-case resistance. Verify impedance matching networks against the provided load-pull data for optimal performance across the specified frequency range.
This part belongs to the Ampleon LDMOS power transistor family, specifically engineered for wireless communication infrastructure. It utilizes advanced lateral diffusion technology to achieve high linearity and ruggedness required for modern base station architectures.
Consult official Ampleon substitution guides for verified alternatives. Cross-reference pin configurations and thermal characteristics carefully when evaluating potential replacements.
The maximum junction temperature is rated at 225 °C.
Yes, the BLC9G22LS-160VT is internally matched for ease of use.
The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.