BLC9G22XS-120AGWTY

Overview

The BLC9G22XS-120AGWT is a 120 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications at frequencies from 2110 MHz to 2200 MHz. It features excellent ruggedness, high efficiency, and low thermal resistance. The device is internally matched and includes integrated ESD protection. Typical performance at VDS = 28 V and Tcase = 25 °C in an asymmetrical Doherty demo circuit shows a drain efficiency of 45% and power gain of 16.8 dB with 1-carrier W-CDMA test signals. Peak output power reaches 120 W.

Feature Summary

• Designed for low memory effects providing excellent digital pre-distortion capability
• Lower output capacitance for improved performance in Doherty applications
• Excellent ruggedness capable of withstanding significant load mismatch conditions

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 2110 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and compliance status. Confirm that the requested part matches the SOT1278-1 air cavity plastic earless flanged package specification. Ensure all handling precautions for electrostatic sensitive devices are followed during procurement and storage to maintain component integrity.

Selection Notes

Select this component for asymmetric Doherty amplifier designs operating within the specified frequency range. Verify that the system can support the required gate-source voltages and quiescent currents. Ensure the thermal management solution maintains the case temperature within the recommended operating limits to preserve reliability and performance metrics under continuous operation.

Part Context

This device belongs to the BLC9G22XS series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless infrastructure, targeting the UMTS/LTE bands. The product utilizes advanced LDMOS technology to deliver high linearity and efficiency in multi-carrier environments, serving as a critical active element in modern cellular base station power amplification stages.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume functional equivalence with other LDMOS devices without verifying pinout, impedance matching, and electrical characteristics against the original datasheet specifications.