BLC9G22XS-120AGWTZ

Overview

The BLC9G22XS-120AGWT is a 120 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1278-1) with six leads, including separate main and peak amplifier connections. The device operates at a drain-source voltage of 28 V with a breakdown voltage of 65 V. Typical performance includes a power gain of 16.8 dB, drain efficiency of 45%, and output power of 15 W average under 1-carrier W-CDMA testing conditions.

Feature Summary

• Designed specifically for low memory effects to support excellent digital pre-distortion capability
• Features lower output capacitance to improve performance in Doherty configurations
• Internally matched for ease of use and integrated ESD protection
• Provides low thermal resistance ensuring excellent thermal stability

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2110 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant and compliance status. Confirm that the SOT1278-1 package dimensions match the intended PCB footprint. Check for any recent revision history updates that may affect electrical characteristics or handling instructions before finalizing procurement specifications.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high ruggedness and efficiency in cellular infrastructure. Ensure the design accommodates the specific impedance requirements for both main and peak devices. Verify that the thermal management solution can handle the junction-to-case thermal resistance values provided in the datasheet under maximum operating conditions.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors optimized for wireless communication infrastructure. It is engineered to meet the stringent linearity and efficiency demands of modern multi-carrier base station architectures. The device represents a specialized solution for Doherty topology implementations within the specified UMTS/LTE frequency bands.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent parts. Do not assume functional compatibility with other LDMOS packages without verifying pinout and impedance matching networks.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC9G22XS-120AGWT can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified test conditions.

How many leads does the SOT1278-1 package have?

The SOT1278-1 package contains six leads, providing separate connections for the main and peak amplifier drains, gates, video decoupling, and source.

What is the typical drain efficiency at 15 W average output power?

The typical drain efficiency is 45% when operating at 15 W average output power with a 1-carrier W-CDMA test signal.