BLC9G22XS-400AVTY

Overview

The BLC9G22XS-400AVT is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-4) with six leads. The device operates at a drain-source voltage of 32 V and includes integrated ESD protection. Typical performance at Tcase = 25 °C yields a power gain of 15.3 dB, drain efficiency of 45%, and ACPR of -34 dBc under 1-carrier W-CDMA conditions. Peak output power reaches 580 W with a PAR of 7.2 dB.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Lower output capacitance improves performance specifically in Doherty applications
• Internally matched configuration ensures ease of use during integration
• Low thermal resistance provides excellent thermal stability

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 2110 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package version and compliance status. Ensure that the procurement channel sources products directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm RoHS compliance requirements align with the product specifications before finalizing orders.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high ruggedness and efficiency in the 2110 MHz to 2200 MHz band. Evaluate impedance data provided in the datasheet for main and peak devices to optimize load-pull matching networks. Consider the internal matching and low thermal resistance when designing heat sinks and PCB layouts for optimal thermal management.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors, specifically engineered for cellular infrastructure. It utilizes Laterally Diffused Metal-Oxide Semiconductor (LDMOS) technology to deliver high power density. The device is intended for replacement or design-in scenarios where robust Doherty operation and low distortion are critical requirements for modern base station architectures.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pinout configurations and thermal characteristics carefully when considering alternative components to ensure compatibility with existing board layouts and cooling systems.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 225 °C according to the absolute maximum ratings.

How does the device handle load mismatches in Doherty operation?

The BLC9G22XS-400AVT can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

What package type is used for this transistor?

The device is housed in an air cavity plastic earless flanged package designated as SOT1258-4.