BLC9G24XS-170AVY

BLC9G24XS-170AVY

$53.43
  • Description:RF MOSFET LDMOS 30V SOT1275-3
  • Series:-

SKU:5845b1df7a79 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:15.5dB
  • Voltage - Test:30 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:28W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT1275-3
  • Supplier Device Package:SOT1275-3
  • Configuration:-

Download product information

BLC9G24XS-170AVY

Overview

The BLC9G24XS-170AVY is a 170 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 65 V and delivers an average output power of 28 W under 1-carrier W-CDMA conditions, achieving a typical drain efficiency of 47% and power gain of 15.5 dB. The device features low thermal resistance (0.247 K/W typ) and integrated ESD protection. Packaged in the SOT1275-1 air cavity plastic earless flanged format, it supports high ruggedness against load mismatches up to 10:1 VSWR.

Feature Summary

  • Internally matched design simplifies integration into RF circuits
  • Decoupling leads enable improved video bandwidth performance
  • Low memory effects provide excellent pre-distortability
  • Integrated ESD protection ensures handling safety

Applications

  • RF power amplifier for W-CDMA base stations
  • Multi-carrier applications in the 2300 MHz to 2400 MHz range
  • Asymmetrical Doherty amplifier configurations

Procurement Notes

Verify the specific ordering suffix 'Y' against official Ampleon documentation to confirm if it denotes a distinct manufacturing revision or packaging variant compared to the standard 'BLC9G24XS-170AV'. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the component meets the specified ESD sensitivity classifications (CDM C2A, HBM 2) for your assembly environment.

Selection Notes

Select this component for designs requiring high efficiency and linearity in the 2300–2400 MHz band. The internal matching network reduces external component count. Verify that the application circuit can maintain the case temperature at 25 °C for optimal performance metrics. Ensure the biasing network supports the required quiescent current of 250 mA for the main device.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for telecommunications infrastructure. It is specifically optimized for asymmetrical Doherty architectures, which are critical for improving efficiency in modern multi-carrier base station amplifiers. The device represents a solution for balancing high output power with strict spectral purity requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult Ampleon technical support for qualified alternatives.

BLC9G24XS-170AVYBLC9G24XS-170AVY
$53.43
Buy Now