BLC9H10XS-300PY

Overview

The BLC9H10XS-300P is a 300 W LDMOS power transistor designed for base station applications in the 600 MHz to 960 MHz frequency range. It operates at a drain-source voltage of 48 V with a breakdown voltage of 108 V. The device delivers a typical output power of 300 W at 3 dB gain compression and achieves a drain efficiency of up to 75.2% under maximum efficiency load conditions. Key electrical parameters include a power gain of 21 dB, an input return loss of -21 dB, and an adjacent channel power ratio of -47 dBc. The component utilizes an SOT1273-1 air cavity plastic earless flanged package.

Feature Summary

• Internally matched for ease of use
• Lower output capacitance for improved performance in Doherty applications
• Designed for low memory effects providing excellent pre-distortability
• Integrated ESD protection

Applications

• RF power amplifier for W-CDMA base stations
• Multi carrier applications in the 600 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly through official Ampleon channels prior to procurement. Ensure that the selected variant matches the required thermal and mechanical constraints for the intended base station implementation.

Selection Notes

Select this component for high-efficiency broadband RF power amplification in cellular infrastructure. Evaluate the thermal resistance characteristics relative to the system's cooling capabilities. Consider the device's ruggedness and load mismatch tolerance when designing for complex modulation schemes or Doherty architectures requiring high linearity and stability.

Part Context

This part belongs to the BLC9H10XS series of LDMOS power transistors from Ampleon. The series targets UHF band base station deployments. The specific model provides a balance of high output power and efficiency suitable for modern multi-carrier wireless communication standards operating within the specified frequency spectrum.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume functional equivalence with other models based solely on similar package types or general power ratings without cross-referencing the manufacturer's documentation.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 225 °C.

How does the device perform under load mismatch conditions?

It can withstand a load mismatch corresponding to VSWR = 10:1 through all phases during Doherty operation.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C2B and a Human Body Model (HBM) classification of 2.