BLC9H10XS-350AZ

BLC9H10XS-350AZ

$61.03
  • Description:RF MOSFET LDMOS 50V SOT1273-1
  • Series:-

SKU:11bbfd52187e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT1273-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:617MHz ~ 960MHz
  • Gain:19.5dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:350W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1273-1
  • Supplier Device Package:SOT1273-1
  • Configuration:-

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BLC9H10XS-350AZ

Overview

The BLC9H10XS-350A is a dual N-channel LDMOS power transistor designed for asymmetric Doherty base station applications in the 617 MHz to 960 MHz range. It features a drain-source voltage of 48 V and delivers 350 W output power with 18 dB gain under 1-carrier W-CDMA testing conditions. The device utilizes an SOT1273-1 air cavity plastic earless flanged package, providing low thermal resistance and high ruggedness. Key electrical parameters include a breakdown voltage of 105 V, a maximum junction temperature of 225 °C, and a case operating temperature range from -40 °C to +125 °C.

Feature Summary

  • Designed specifically for asymmetric Doherty amplifier architectures
  • Features internal integrated wideband input matching
  • Provides excellent ruggedness against load mismatches
  • Includes integrated ESD protection

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 617 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements as stated in the product details. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to the C3 charged device model classification.

Selection Notes

Select this component when designing asymmetric Doherty power amplifiers requiring high efficiency and linearity in UHF bands. Evaluate the impedance data provided for main and peak devices at specific frequencies to optimize circuit matching networks. Consider the thermal characteristics and recommended operating conditions to ensure stable performance within the specified case temperature limits.

Part Context

This part belongs to Ampleon's BLC9H10XS series of power LDMOS transistors. It shares the same core technology and package outline (SOT1273-1) with other variants in the family, such as the BLC9H10XS-600AZ, but differs in output power ratings and specific RF performance metrics tailored for different power levels within the same frequency band.

Replacement Considerations

Direct replacements must match the SOT1273-1 package and pinout configuration. Verify that alternative components support the required 48 V drain-source voltage and operate effectively within the 617 MHz to 960 MHz frequency range. Ensure any substitute maintains comparable ruggedness and thermal resistance for Doherty applications.

BLC9H10XS-350AZBLC9H10XS-350AZ
$61.03
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