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The BLC9H10XS-500AY is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the 617 MHz to 960 MHz frequency range, delivering a continuous wave output power of 500 W with a typical gain of 18.6 dB at 48 V drain bias. The device features a 48 V drain-source breakdown voltage and an on-resistance ranging from 174 mOhms to 250 mOhms depending on the channel configuration. Designed for surface mount installation, it utilizes the SOT1273-1 package and supports an operating temperature range from -40°C to +125°C.
Verify component authenticity through authorized Ampleon distributors or certified supply chain partners. Confirm RoHS compliance status and moisture sensitivity level prior to soldering. Ensure storage conditions meet humidity requirements to prevent package degradation before reflow assembly.
Select this component when designing circuits requiring 500 W output power in the 617-960 MHz band. Compare against the BLC9H10XS-600AY if higher power output is needed, noting the difference in package type and thermal characteristics. Ensure the PCB layout accommodates the SOT1273-1 package dimensions for proper heat dissipation.
This part belongs to Ampleon's BLC9H10XS series of high-power LDMOS transistors designed for UHF base station applications. It shares architectural similarities with the BLP9H10S series but differs in packaging and specific power handling capabilities tailored for different thermal management strategies in transmitter modules.
Direct substitutes are not explicitly listed in public documentation. The BLC9H10XS-600A offers higher power but uses a different package (SOT1250-2). Designers must evaluate thermal interface compatibility and pinout differences when considering alternative models from the same family.