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The BLC9H10XS-505AYZ is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. It operates within the 617 MHz to 960 MHz frequency range and delivers a rated output power of 500 W at a drain-source voltage (Vds) of 48 V. The device features a typical gain of 18.2 dB and utilizes the SOT273-1 surface-mount package. Designed for robust performance, it supports a minimum operating temperature of -40°C and a maximum of +125°C, making it suitable for high-power UHF applications requiring efficient signal amplification.
Verify the specific suffix 'YZ' against official Ampleon documentation to confirm packaging or tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SOT273-1 package. Confirm RoHS compliance status through the manufacturer's current datasheet before finalizing procurement orders.
Select this component when designing circuits requiring 500 W output power in the UHF spectrum. Compare its 18.2 dB gain and 48 V rating against system requirements. Ensure the design accommodates the SOT273-1 package dimensions and thermal management needs for continuous wave operation.
This part belongs to the BLC9H10XS series of high-power LDMOS transistors. It shares architectural similarities with other models like the BLC9H10XS-600A but offers lower output power (500 W vs 600 W). It serves as a specialized solution for applications where moderate power levels are sufficient, balancing performance with potentially reduced thermal stress compared to higher-wattage variants.
Direct substitutes include the BLC9H10XS-600A or BLC9H10XS-500A from Ampleon. Verify pinout compatibility and ensure the replacement meets the 500 W power requirement. Check if the alternative package variant matches the SOT273-1 footprint.