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The BLC9H10XS-505AZ is a power LDMOS transistor manufactured by Ampleon. It is designed for base station applications operating at frequencies from 617 MHz to 960 MHz. The device features an asymmetric Doherty configuration with a maximum output power of 350 W. It utilizes the SOT-1273-1 surface mount package. Key electrical parameters include a drain-source breakdown voltage of 48 V and a typical gain of 19 dB. The component supports operation within a temperature range of -40°C to +125°C.
Verify the specific suffix 'AZ' against the official Ampleon datasheet to confirm packaging and tape-and-reel specifications. Ensure compatibility with the SOT-1273-1 footprint during PCB layout. Confirm that the obsolete status does not impact long-term supply chain requirements for your production cycle.
Select this component when designing high-efficiency Doherty power amplifiers for the 617–960 MHz band. The 350 W output capability suits macro cell base stations. Compare thermal resistance values in the datasheet against your heatsink design to ensure junction temperatures remain within the specified limits under continuous wave operation.
This part belongs to the BLC9H10 series of LDMOS transistors from Ampleon. These devices are engineered specifically for wireless communication infrastructure. The series offers a balance of high power density and linearity, making them suitable for modern multi-carrier modulation schemes used in 4G LTE and 5G networks.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Ampleon's official replacement guide or contact technical support directly for qualified alternatives.