BLC9H10XS-600AY

$90.47

Description：RF MOSFET LDMOS 50V DFM4
Series：-

SKU:31e7ce3bff99 Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V DFM4
Series：-
Mfr：Ampleon USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：616MHz ~ 960MHz
Gain：17.7dB
Voltage - Test：50 V
Current Rating (Amps)：1.4µA
Noise Figure：-
Current - Test：1.4 A
Power - Output：600W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-1250-2
Supplier Device Package：DFM4
Configuration：2 N-Channel (Dual) Common Source

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BLC9H10XS-600AY

Overview

The BLC9H10XS-600AY is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. Designed for high-power applications, it operates within the frequency range of 616 MHz to 960 MHz. The device delivers an output power of 600 W with a gain of 17.5 dB. Key electrical parameters include a drain-source breakdown voltage (Vds) of 48 V and on-resistance values of 107 mOhms and 203 mOhms. It supports gate-source voltages from -6 V to +11 V, with a threshold voltage of 2.5 V. The component functions reliably between -40°C and +125°C and utilizes an SMD/SMT SOT1250-2-5 package.

Feature Summary

Dual N-channel LDMOS architecture for high-power RF amplification
Optimized performance in the 616 MHz to 960 MHz UHF band
Robust thermal stability across extended temperature ranges

Applications

Wireless communication infrastructure
Broadcasting systems
UHF power amplifier modules

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions respect humidity sensitivity requirements to maintain device integrity during handling and assembly processes.

Selection Notes

Select this component for designs requiring 600 W output power in the specified UHF frequency range. Evaluate thermal management solutions suitable for the SOT1250-2-5 package to ensure operation within the +125°C maximum junction temperature limit. Verify compatibility with the required 48 V supply voltage and gate drive specifications.

Part Context

This part belongs to the BLC9H10XS series of high-voltage, high-power LDMOS transistors. It shares architectural similarities with models like BLC9H10XS-600A but differs in packaging and reel configuration. The series targets demanding RF power applications where efficiency and linearity are critical.