BLC9H10XS-600AZ

Overview

The BLC9H10XS-600AZ is a dual N-channel LDMOS power transistor designed for base station applications in the 616 MHz to 960 MHz frequency range. It features an internal matching network and integrated ESD protection within a plastic earless flanged cavity package (SOT1250-2). The device provides a typical output power of 600 W with drain efficiency reaching up to 57.2% at 750 MHz under 1-carrier W-CDMA test conditions. Key electrical parameters include a drain-source breakdown voltage of 105 V, a gate-source threshold voltage of 2.0 V typ, and a thermal resistance from junction to case ranging from 0.198 k/W to 0.236 k/W depending on operating conditions.

Feature Summary

• Designed specifically for asymmetrical Doherty amplifier configurations with lower output capacitance to enhance performance.
• Features excellent ruggedness capable of withstanding high load mismatch conditions during Doherty operation.
• Incorporates low memory effects to facilitate effective digital pre-distortion implementation.
• Includes an internally matched network and integrated electrostatic discharge protection for simplified integration.

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 616 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging variations or regional distribution differences. Ensure that the ordering information matches the required package version and lead time constraints provided by authorized distributors. Confirm RoHS compliance status through the manufacturer's product details page before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high power density and efficiency in UHF bands. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the device's impedance characteristics for main and peak devices when designing the matching networks for optimal power gain and drain efficiency.

Part Context

This part belongs to the BLC9H10XS series of LDMOS transistors manufactured by Ampleon. It is engineered for high-power RF applications, specifically targeting the needs of modern wireless communication infrastructure. The device represents a solution for efficient signal amplification in multi-carrier environments.

Replacement Considerations

Consult the official Ampleon datasheet for confirmed substitute part numbers. Verify pin compatibility and thermal specifications before considering alternative components from other manufacturers.