BLC9H10XS-606AZ

BLC9H10XS-606AZ

$88.98
  • Description:RF MOSFET LDMOS 48V SOT1250-4
  • Series:-

SKU:7b4eaa44ffee Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 48V SOT1250-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:616MHz ~ 960MHz
  • Gain:18dB
  • Voltage - Test:48 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.8 A
  • Power - Output:600W
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1250-4
  • Supplier Device Package:SOT1250-4
  • Configuration:2 N-Channel (Dual) Common Source

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BLC9H10XS-606AZ

Overview

The BLC9H10XS-606A is a 600 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 616 MHz to 960 MHz frequency range. It features an SOT1250-4 plastic earless flanged cavity package with four leads and two channels (main and peak). The device operates with a drain-source voltage of 48 V to 50 V, achieving typical drain efficiencies between 50% and 70%. Key electrical parameters include a maximum drain-source breakdown voltage of 110 V, gate-source threshold voltage of 2.0 V typ, and on-state resistance ranging from 82 mΩ to 203 mΩ depending on the channel.

Feature Summary

  • Designed specifically for asymmetrical Doherty amplifier configurations to enhance efficiency.
  • Features low output capacitance to improve performance in Doherty applications.
  • Incorporates internal matching networks and integrated ESD protection for ease of use.
  • Engineered for low memory effects to support excellent digital pre-distortion capability.

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 616 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific suffix against the manufacturer's current product status page, as ordering codes may indicate variations in tape-and-reel specifications or testing criteria. Confirm RoHS compliance details directly through official Ampleon channels prior to finalizing procurement orders.

Selection Notes

Select this component for high-efficiency Doherty PA designs requiring robust ruggedness under load mismatch conditions. Ensure thermal management supports the specified junction temperature limits and verify that the application signal characteristics align with the tested W-CDMA profiles.

Part Context

This part belongs to the BLC9H10XS series of high-power LDMOS transistors manufactured by Ampleon. It is engineered for UHF band operations, providing a balance of high output power and linearity suitable for modern cellular infrastructure requirements.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitutes. Cross-reference pinout compatibility and thermal resistance values when considering alternative packages within the same power class.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC9H10XS-606A can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

What is the ESD sensitivity classification?

The device is classified as C3 under the Charged Device Model (CDM) and Class 2 under the Human Body Model (HBM).

What test signal was used for the typical performance data?

Performance data is based on a 1-carrier W-CDMA signal using 3GPP test model 1 with 64 DPCH and a PAR of 9.6 dB at 0.01% probability on CCDF.

BLC9H10XS-606AZBLC9H10XS-606AZ
$88.98
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