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The BLC9H10XS-606A is a 600 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 616 MHz to 960 MHz frequency range. It features an SOT1250-4 plastic earless flanged cavity package with four leads and two channels (main and peak). The device operates with a drain-source voltage of 48 V to 50 V, achieving typical drain efficiencies between 50% and 70%. Key electrical parameters include a maximum drain-source breakdown voltage of 110 V, gate-source threshold voltage of 2.0 V typ, and on-state resistance ranging from 82 mΩ to 203 mΩ depending on the channel.
Verify the specific suffix against the manufacturer's current product status page, as ordering codes may indicate variations in tape-and-reel specifications or testing criteria. Confirm RoHS compliance details directly through official Ampleon channels prior to finalizing procurement orders.
Select this component for high-efficiency Doherty PA designs requiring robust ruggedness under load mismatch conditions. Ensure thermal management supports the specified junction temperature limits and verify that the application signal characteristics align with the tested W-CDMA profiles.
This part belongs to the BLC9H10XS series of high-power LDMOS transistors manufactured by Ampleon. It is engineered for UHF band operations, providing a balance of high output power and linearity suitable for modern cellular infrastructure requirements.
Consult the official Ampleon replacement guide for verified substitutes. Cross-reference pinout compatibility and thermal resistance values when considering alternative packages within the same power class.
The BLC9H10XS-606A can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.
The device is classified as C3 under the Charged Device Model (CDM) and Class 2 under the Human Body Model (HBM).
Performance data is based on a 1-carrier W-CDMA signal using 3GPP test model 1 with 64 DPCH and a PAR of 9.6 dB at 0.01% probability on CCDF.