BLC9H10XS-60PZ

BLC9H10XS-60PZ

$45.40
  • Description:RF MOSFET LDMOS 50V SOT1273-1
  • Series:-

SKU:ad4c5d1b8e4f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT1273-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:400MHz ~ 1GHz
  • Gain:16.3dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:115 mA
  • Power - Output:102W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1273-1
  • Supplier Device Package:SOT1273-1
  • Configuration:-

Download product information

BLC9H10XS-60PZ

Overview

The BLC9H10XS-60P is a 60 W LDMOS symmetric power transistor designed for base station applications in the 400 MHz to 1000 MHz frequency range. It features a drain-source voltage of 105 V and operates within a junction temperature range up to 225 °C. The device utilizes an air cavity plastic earless flanged package (SOT1273-1) with four leads, where drains are connected to the flange. Typical performance at 940 MHz includes a gain of 16.5 dB and drain efficiency of 13% under 1-carrier W-CDMA conditions.

Feature Summary

  • Designed for broadband operation across 400 MHz to 1000 MHz
  • Integrated ESD protection with CDM Class 3 and HBM Class 2 ratings
  • Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
  • High efficiency and excellent thermal stability

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 400 MHz to 1000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm RoHS compliance status via official product details before procurement. Ensure proper ESD precautions are observed during storage and assembly due to the component's sensitivity classification.

Selection Notes

Select this component for high-power RF amplifier designs requiring robust load mismatch tolerance. Verify that the operating frequency falls within the specified 400 MHz to 1000 MHz range. Ensure the application circuit can maintain the case temperature within the -40 °C to +125 °C operating limits to guarantee reliability.

Part Context

This part belongs to the BLC9H10XS series of LDMOS power transistors from Ampleon. These devices are engineered for wireless communication infrastructure, specifically targeting UHF bands used in cellular base stations. The symmetric design facilitates balanced circuit layouts for improved performance in multi-carrier environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer for potential alternatives if this specific package or specification is unavailable.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 105 V.

How does the device handle load mismatches?

It is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases under specified test conditions.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C3 and a Human Body Model (HBM) classification of 2.

BLC9H10XS-60PZBLC9H10XS-60PZ
$45.40
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