BLD6G22L-50,112

Overview

The BLD6G22L-50,112 is an LDMOS RF power transistor manufactured by Ampleon USA Inc. Designed for high-efficiency performance in the VHF band, this component operates within a frequency range of 144 MHz to 174 MHz. It delivers a typical output power of 50 W with a gain of approximately 18 dB at a drain voltage of 28 V. The device utilizes a rugged silicon LDMOS technology and is housed in a lead-free ceramic flange mount package (SOT-1139) suitable for surface mounting or direct heatsink attachment. Key electrical characteristics include a drain-source breakdown voltage of 65 V and a maximum junction temperature rating of 150 °C, ensuring reliability in demanding RF amplification applications.

Feature Summary

• High power density and efficiency optimized for VHF broadcast and communication bands
• Rugged silicon LDMOS construction providing enhanced thermal stability and reliability
• Lead-free ceramic flange mount package designed for efficient heat dissipation

Applications

• VHF FM radio broadcasting transmitters
• Television transmission systems operating in the VHF band
• Professional two-way radio base station amplifiers
• Industrial heating and plasma generation sources

Procurement Notes

Verify the specific suffix '112' against the manufacturer's current datasheet to confirm lead-free compliance and tape-and-reel packaging specifications. Ensure that the ordering information matches the exact mechanical dimensions and pinout configuration required for the target PCB footprint or heatsink interface. Cross-reference the RoHS status with the latest environmental declarations provided by Ampleon.

Selection Notes

Select this component when designing amplifiers for the 144-174 MHz range requiring 50 W output power. Compare the 18 dB gain and 28 V operating voltage against alternative devices to ensure compatibility with existing bias networks and impedance matching circuits. Consider the thermal resistance of the SOT-1139 package when calculating heatsink requirements for continuous wave operation versus pulsed duty cycles.

Part Context

This part belongs to the BLD6G series of VHF LDMOS transistors from Ampleon. It serves as a core active element in linear RF power amplifiers. The device is engineered to replace older generation technologies in broadcast infrastructure, offering improved linearity and power-added efficiency. It is commonly used in conjunction with matching networks and cooling solutions to build robust transmitter modules.

Replacement Considerations

Direct replacements may include other 50 W VHF LDMOS transistors from Ampleon or competitors such as NXP Semiconductors, provided the pinout and thermal characteristics are compatible. Verify that substitute parts meet the same gain and breakdown voltage requirements to maintain system performance without redesigning the bias circuitry.