BLF1043,112

BLF1043,112

  • Description:RF MOSFET LDMOS 26V 2CSMD
  • Series:-

SKU:42a7c8e3240c Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V 2CSMD
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:18.5dB
  • Voltage - Test:26 V
  • Current Rating (Amps):2.2A
  • Noise Figure:-
  • Current - Test:85 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-538A
  • Supplier Device Package:2-CSMD
  • Configuration:-

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BLF1043,112

Overview

The BLF1043,112 is a 10 W LDMOS power transistor designed for base station applications across the HF to 1000 MHz frequency range. It operates with a drain-source voltage of 65 V and delivers 10 W PEP output at 960 MHz with 18.5 dB gain and 40% efficiency. The device features a ceramic surface-mounted SOT538A package with two leads. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage of 4 to 5 V, and a thermal resistance from junction to heatsink of 9 K/W.

Feature Summary

  • Designed for broadband operation from HF to 1000 MHz without internal matching
  • Excellent ruggedness capable of withstanding high VSWR mismatches
  • High power gain and excellent thermal stability
  • Easy power control capabilities

Applications

  • RF power amplifiers for GSM, EDGE, and CDMA base stations
  • Multicarrier applications in the 800 to 1000 MHz frequency range
  • Broadcast drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and compliance status. Confirm that the component meets all relevant environmental directives required for your region before finalizing procurement orders.

Selection Notes

Select this component for UHF base station designs requiring robust performance in the 800-1000 MHz band. Ensure the application circuit provides adequate thermal management given the 9 K/W junction-to-heatsink resistance rating. Verify that the operating conditions remain within the absolute maximum ratings to prevent permanent damage.

Part Context

This part belongs to Ampleon's portfolio of UHF power LDMOS transistors. It is specifically engineered for high-efficiency broadband applications in telecommunications infrastructure. The device represents a mature technology optimized for reliability in demanding RF power amplifier environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume compatibility based on generic specifications alone.

BLF1043,112BLF1043,112

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