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The BLF1043,112 is a 10 W LDMOS power transistor designed for base station applications across the HF to 1000 MHz frequency range. It operates with a drain-source voltage of 65 V and delivers 10 W PEP output at 960 MHz with 18.5 dB gain and 40% efficiency. The device features a ceramic surface-mounted SOT538A package with two leads. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage of 4 to 5 V, and a thermal resistance from junction to heatsink of 9 K/W.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and compliance status. Confirm that the component meets all relevant environmental directives required for your region before finalizing procurement orders.
Select this component for UHF base station designs requiring robust performance in the 800-1000 MHz band. Ensure the application circuit provides adequate thermal management given the 9 K/W junction-to-heatsink resistance rating. Verify that the operating conditions remain within the absolute maximum ratings to prevent permanent damage.
This part belongs to Ampleon's portfolio of UHF power LDMOS transistors. It is specifically engineered for high-efficiency broadband applications in telecommunications infrastructure. The device represents a mature technology optimized for reliability in demanding RF power amplifier environments.
Consult official Ampleon documentation for verified substitute part numbers. Do not assume compatibility based on generic specifications alone.