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The BLF1046 is a silicon N-channel enhancement mode lateral D-MOS (LDMOS) transistor designed for UHF broadband applications. Encapsulated in the SOT467C flange package with a ceramic cap, it features a common source connected to the mounting flange. Operating at VDS = 26 V and f = 960 MHz, it delivers 45 W PEP output power with greater than 14 dB gain and over 35% drain efficiency in Class-AB two-tone operation. The device withstands a VSWR of 10:1 through all phases, ensuring excellent ruggedness.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure compatibility with the SOT467C flange package dimensions during mechanical integration. Confirm that the component meets required RoHS standards for the intended deployment environment before finalizing procurement orders.
Select this LDMOS transistor for designs requiring robust performance in UHF communication transmitters. The device supports broadband operation up to 1 GHz and offers high linearity suitable for complex modulation schemes. Evaluate thermal management requirements based on the specified junction-to-heatsink resistance to maintain optimal operating temperatures under continuous wave conditions.
Originally developed by Philips Semiconductors, the BLF1046 was transferred to Ampleon following the spin-off of RF Power operations in December 2015. This transition established Ampleon as an independent entity specializing in RF power solutions. The component remains part of the extensive portfolio of UHF power LDMOS transistors utilized in industrial and communication sectors.
Consult official Ampleon substitution guides for verified equivalent components. Cross-reference pin configurations and electrical parameters carefully when considering alternative devices to ensure circuit compatibility without redesign.