BLF1046,112

BLF1046,112

  • Description:RF MOSFET LDMOS 26V SOT467C
  • Series:-

SKU:bed9042564ee Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V SOT467C
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:14dB
  • Voltage - Test:26 V
  • Current Rating (Amps):4.5A
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-467C
  • Supplier Device Package:SOT467C
  • Configuration:-

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BLF1046,112

Overview

The BLF1046 is a silicon N-channel enhancement mode lateral D-MOS (LDMOS) transistor designed for UHF broadband applications. Encapsulated in the SOT467C flange package with a ceramic cap, it features a common source connected to the mounting flange. Operating at VDS = 26 V and f = 960 MHz, it delivers 45 W PEP output power with greater than 14 dB gain and over 35% drain efficiency in Class-AB two-tone operation. The device withstands a VSWR of 10:1 through all phases, ensuring excellent ruggedness.

Feature Summary

  • High power gain and easy power control capabilities
  • Excellent ruggedness capable of withstanding high load mismatch
  • Source on underside eliminates DC isolators and reduces common mode inductance
  • Designed for broadband operation from HF to 1 GHz

Applications

  • Communication transmitter applications in the UHF frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure compatibility with the SOT467C flange package dimensions during mechanical integration. Confirm that the component meets required RoHS standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this LDMOS transistor for designs requiring robust performance in UHF communication transmitters. The device supports broadband operation up to 1 GHz and offers high linearity suitable for complex modulation schemes. Evaluate thermal management requirements based on the specified junction-to-heatsink resistance to maintain optimal operating temperatures under continuous wave conditions.

Part Context

Originally developed by Philips Semiconductors, the BLF1046 was transferred to Ampleon following the spin-off of RF Power operations in December 2015. This transition established Ampleon as an independent entity specializing in RF power solutions. The component remains part of the extensive portfolio of UHF power LDMOS transistors utilized in industrial and communication sectors.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent components. Cross-reference pin configurations and electrical parameters carefully when considering alternative devices to ensure circuit compatibility without redesign.

BLF1046,112BLF1046,112

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