BLF1721M8LS200U

Overview

The BLF1721M8LS200 is a 200 W LDMOS power transistor designed for industrial, scientific, and medical (ISM) applications and industrial heating within the 1700 MHz to 2100 MHz frequency range. It operates at VDS = 28V with a drain-source breakdown voltage of 65V. Typical performance includes a power gain of 14.9 dB to 15.3 dB and drain efficiency up to 55.8% in pulsed RF mode. The device features an earless flanged ceramic package (SOT502B) with a thermal resistance from junction to case of 0.263 K/W.

Feature Summary

• Designed for broadband operation with low memory effects to support excellent pre-distortability
• Features lower output capacitance to improve performance in Doherty amplifier configurations
• Internally matched for ease of use and includes integrated ESD protection
• Provides high efficiency and low thermal resistance for excellent thermal stability

Applications

• RF power amplifiers for ISM applications
• Industrial heating systems
• Pulsed and CW RF power amplifiers in the 1700 MHz to 2100 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements as stated in the product data sheet. Ensure handling procedures adhere to ESD sensitivity standards such as ANSI/ESD S20.20 or IEC/ST 61340-5 during installation.

Selection Notes

Select this component for designs requiring robust ruggedness capable of withstanding a VSWR of 10:1 through all phases. Consider the internal matching and low memory effects when designing linear amplification stages. Verify thermal management capabilities align with the specified junction-to-case thermal resistance for the intended operating temperature conditions.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors, which are utilized in various RF power applications. The BLF1721M8LS200 specifically targets the 1700 MHz to 2100 MHz band, offering a balance of high output power and efficiency suitable for demanding industrial environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without cross-referencing pinouts, electrical characteristics, and package dimensions.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF1721M8LS200 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified Class-AB operating conditions.

What is the typical thermal resistance from junction to case?

The typical thermal resistance from junction to case (Rth(j-c)) is 0.263 K/W when measured at Tcase = 80°C with PL = 55W (CW).

Is the device internally matched?

Yes, the BLF1721M8LS200 is internally matched to facilitate ease of use in circuit design.