BLF1822-10,112

Overview

The BLF1822-10 is a UHF power LDMOS transistor designed for broadband operation from HF to 2200 MHz. It delivers 10 W PEP output at 26 V supply voltage with an IDQ of 85 mA. At 900 MHz, it provides typical gain of 18.5 dB and efficiency of 39%. At 2200 MHz, typical gain is 13.5 dB with 34% efficiency. The device features excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases. It utilizes the SOT467C flanged ceramic package.

Feature Summary

• Broadband capability spanning HF to 2200 MHz without internal matching
• High power gain and excellent thermal stability
• Robust performance under load mismatch conditions

Applications

• RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations
• Multicarrier applications in the HF to 2200 MHz frequency range
• Broadcast drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and tape/reel specifications. Confirm RoHS compliance status as per the latest datasheet revision. Ensure anti-static handling procedures are followed during transport and assembly to prevent electrostatic discharge damage.

Selection Notes

Select this component for designs requiring wide bandwidth coverage from HF up to 2.2 GHz. Ensure the thermal management system maintains the mounting base temperature at or below 25 °C for optimal performance metrics. Verify that the bias circuit supports the required 26 V drain-source voltage and appropriate gate-source threshold levels.

Part Context

Originally developed by Philips Semiconductors, this part was transferred to Ampleon following the spin-off of RF Power in December 2015. The BLF1822-10 belongs to the UHF power LDMOS family, serving as a versatile solution for multi-standard base station infrastructure where broad frequency coverage is essential.

Replacement Considerations

Consult official Ampleon documentation for direct replacements. Cross-reference with other BLF series transistors such as BLF1822 variants or newer generation LDMOS devices offering similar power and frequency characteristics.