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The BLF184XRGQ is a 700 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and delivers 700 W pulsed output power at 108 MHz, achieving 23.9 dB gain and 73.5% efficiency. The device features a maximum junction temperature of 225 °C and a thermal resistance from junction to case of 0.18 K/W. Packaged in an earless flanged SOT1214C ceramic housing, it includes integrated ESD protection and exhibits excellent ruggedness against load mismatches exceeding 65:1 VSWR.
Verify the specific suffix 'Q' against official Ampleon documentation to confirm any deviations from the standard BLF184XRG specifications. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the ordering information matches the exact package version and lead configuration required for the intended design implementation.
Select this component for designs requiring high power density within the HF to 600 MHz spectrum. Evaluate the 0.18 K/W thermal resistance for adequate heat sinking solutions to maintain junction temperatures below 225 °C. Consider the 135 V breakdown voltage for robust circuit protection margins. Verify impedance matching networks against the typical push-pull impedance values provided in the datasheet.
The BLF184XRGQ belongs to the BLF184 series of power LDMOS transistors manufactured by Ampleon. This family is engineered for high-power RF amplification tasks. The standard BLF184XRG variant utilizes an earless flanged SOT1214C package. The Q suffix indicates a specific manufacturing or packaging variation that requires verification against the primary product data sheet.
Direct replacements are not explicitly listed in the provided documentation. Designers should consult Ampleon's portfolio for similar 700 W LDMOS transistors operating in the HF to 600 MHz band. Verify pinout compatibility and thermal characteristics before substituting.