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The BLF188XRGJ is a 1400 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and features a dual common-source configuration within an earless flanged SOT-1248C ceramic package. The device delivers a typical power gain of 24.4 dB at 108 MHz pulsed RF operation, achieving up to 73% drain efficiency. Its maximum drain-source breakdown voltage is rated at 135 V, ensuring robust performance under high-stress conditions.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability for this RF component. Confirm RoHS3 directive compliance requirements prior to finalizing acquisition orders.
Select this component for high-power RF amplification requiring extreme ruggedness and wide bandwidth coverage. Evaluate thermal management solutions based on the junction-to-case thermal resistance specifications. Ensure the application circuit supports the required quiescent current and biasing conditions for optimal class-AB performance.
This part belongs to the BLF188 series of power LDMOS transistors manufactured by Ampleon USA Inc. The 'XRG' designation indicates the specific earless flanged ceramic package variant. It serves as a high-reliability solution for demanding RF power stages where durability and consistent gain are critical operational parameters.
Consult official Ampleon substitution guides for verified equivalents. Cross-reference pin configurations and thermal characteristics carefully when considering alternative components.