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The BLF188XRU is a 1400 W LDMOS power transistor designed for broadcast and industrial applications in the HF to 600 MHz band. It operates with a drain-source voltage of 50 V and quiescent current of 40 mA. The device achieves a typical power gain of 24.4 dB and drain efficiency of 73% at 108 MHz pulsed RF operation. It features a maximum drain-source breakdown voltage of 135 V and a junction temperature limit of 225 °C. The component utilizes a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status and export control classification prior to procurement. Ensure handling procedures adhere to ESD sensitivity standards during storage and assembly processes.
Select this component for high-power RF amplification requiring robustness against impedance mismatches. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the operating frequency range aligns with the intended HF to 600 MHz application bandwidth.
This part belongs to the BLF188XR series manufactured by Ampleon USA Inc. It represents a laterally diffused metal-oxide semiconductor technology optimized for high-power density. The device is distinct from surface-mount variants within the same family due to its flanged ceramic construction.
The BLF188XRS serves as a variant within the same product family. Verify pinout compatibility and package dimensions before substitution. Consult official datasheets for any differences in electrical characteristics or mechanical specifications between these two part numbers.