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The BLF189XRASU is an extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 500 MHz band. It delivers a continuous output power of 1700 W at 108 MHz with a drain efficiency of 74% under pulsed RF conditions (tp = 100 µs, duty cycle = 20%). The device operates on a standard 50 V supply and features a maximum junction temperature rating of 225 °C. Packaged in the earless flanged balanced ceramic SOT539B format, it integrates dual-sided ESD protection and offers excellent thermal stability.
Verify the specific suffix 'U' against official Ampleon documentation to confirm packaging or handling specifications. Ensure that the selected component matches the required package variant, such as the SOT539B earless flanged configuration, to guarantee proper mechanical integration and electrical performance in the target design.
Select this component for high-power RF amplification requiring robustness against impedance mismatches. Verify that the application environment supports the specified maximum junction temperature of 225 °C and that the thermal management system can maintain the case temperature within recommended limits during continuous operation.
The BLF189XRASU belongs to the BLF189XRA series of power LDMOS transistors manufactured by Ampleon. This series includes variants like the BLF189XRA (SOT539A), which differs primarily in the physical package structure. Both variants share identical electrical characteristics and are engineered for high-power broadcast and industrial use cases.
The BLF189XRA serves as a direct functional alternative within the same product family. When substituting, verify that the mechanical package dimensions align with the existing footprint, as the BLF189XRA utilizes the SOT539A package while the BLF189XRAS uses the SOT539B earless flanged package.