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The BLF189XRBS is a 1900 W extremely rugged LDMOS power transistor designed for industrial pulsed applications in the HF to 150 MHz band. It features an earless flanged balanced ceramic package (SOT539B) with four leads and a drain connected to the flange. Key electrical parameters include a drain-source voltage of 135 V, a gate-source threshold voltage ranging from 1.33 V to 2.33 V, and a thermal resistance from junction to case of 0.12 K/W at Tj = 150 °C. At 108 MHz pulsed RF operation with VDS = 50 V, it delivers 1900 W output power with a typical gain of 26 dB and drain efficiency of 72.5%.
Verify the specific ordering suffix 'SU' against official Ampleon documentation, as the provided datasheet lists 'BLF189XRB' and 'BLF189XRBS'. Confirm that the component matches the SOT539B earless flanged balanced ceramic package description. Ensure compliance with RoHS Directive 2002/95/EC requirements before procurement.
Select this component for high-power pulsed applications requiring extreme ruggedness and VSWR tolerance exceeding 65:1. The device is suitable for designs operating within the HF to 150 MHz range. Consider the SOT539B package dimensions and mounting hole specifications for PCB layout and mechanical integration.
The BLF189XRBS belongs to the BLF189 series of power LDMOS transistors manufactured by Ampleon. It shares core performance characteristics with the BLF189XRB but utilizes the SOT539B earless flanged balanced ceramic package instead of the SOT539A version with mounting holes.
The BLF189XRB serves as a direct functional alternative, differing primarily in package configuration (SOT539A vs. SOT539B). Verify mechanical fit and mounting requirements when substituting between these two variants.