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The Ampleon BLF189XRB is a 1900 W extremely rugged LDMOS power transistor designed for industrial pulsed applications in the HF to 150 MHz band. It operates with a drain-source voltage of 135 V and delivers 1900 W output power at 108 MHz with 26 dB gain and 72.5% efficiency under pulsed conditions (tp=100µs, δ=20%). The device features integrated dual-sided ESD protection, high thermal stability, and withstands VSWR > 65:1. It is available in SOT539A (flanged) and SOT539B (earless flanged) ceramic packages.
Verify the specific package variant required for the design, as the BLF189XRB denotes the flanged SOT539A package while the BLF189XRBS denotes the earless SOT539B package. Confirm that the application utilizes pulsed RF signals within the specified duty cycle and pulse width limits to ensure the device remains within its absolute maximum ratings and thermal constraints during operation.
Select this component for high-power industrial pulsed systems operating between HF and 150 MHz where extreme load mismatch tolerance is critical. Ensure the thermal management system can handle the junction-to-case thermal resistance of 0.12 K/W. Verify that the input impedance matching network aligns with the typical push-pull impedance values provided for the 108 MHz test frequency to achieve optimal gain and efficiency.
The BLF189XRB belongs to Ampleon's portfolio of LDMOS power transistors engineered for robust performance in non-cellular communication and industrial sectors. It complements other high-power devices by offering superior ruggedness against severe load mismatches. The product line emphasizes reliability and ease of power control for manufacturers designing high-efficiency RF energy solutions.
The BLF189XRBS serves as the direct functional equivalent with an earless flanged SOT539B package instead of the standard flanged SOT539A. Designers must verify mechanical mounting compatibility when substituting between these two variants.