BLF202,115

Overview

The Ampleon BLF202,115 is an HF/VHF power MOS transistor designed for communications transmitters operating at a nominal supply voltage of 12.5 V. It utilizes a silicon N-channel enhancement mode vertical D-MOS technology housed in an 8-lead SOT409A surface-mount package with a ceramic cap. The device delivers a typical output power of 2 W at 175 MHz with a power gain exceeding 10 dB and drain efficiency greater than 50%. Key electrical parameters include a drain-source breakdown voltage of 40 V, a maximum junction temperature of 200 °C, and a thermal resistance from junction to mounting base of 20.5 K/W.

Feature Summary

• High power gain suitable for efficient signal amplification
• Robust ruggedness capable of withstanding full load mismatch conditions
• Gold metallization structure ensuring reliable performance
• Integrated easy power control mechanisms

Applications

• Communications transmitters in the HF/VHF range
• Broadcast transmitter stages requiring 12.5 V operation
• Amplifier modules for professional radio systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product specification to confirm pinout compatibility and packaging details. Ensure that the component status aligns with long-term availability requirements for production designs. Cross-reference the datasheet revision date to validate that all limiting values and thermal characteristics match the intended application constraints.

Selection Notes

Select this component for applications requiring stable HF/VHF amplification with high load mismatch tolerance. Evaluate the thermal management strategy carefully, as the device relies on a grounded metallized area for heat dissipation. Confirm that the gate-source threshold voltage group matches the biasing circuit design to ensure consistent performance across production batches.

Part Context

Originally specified by Philips Semiconductors, this part represents an evolution in HF/VHF discrete power MOS technology. It serves as a foundational component for linear amplifier designs where moderate power output and high reliability are prioritized over ultra-high frequency operation. The transition from through-hole to surface-mount SOT409A packaging facilitates automated assembly processes.

Replacement Considerations

Direct substitutes within the same family or equivalent specifications should be verified against the SOT409A footprint and thermal resistance limits. Any replacement must maintain the 40 V drain-source breakdown voltage and compatible gate threshold voltage ranges to ensure circuit stability.