SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF2045 is a UHF power LDMOS transistor designed for broadband operation in the 1800 to 2200 MHz frequency range. It features a plastic surface-mounted SOT467C package with three leads, where the source connects to the mounting flange. Key electrical parameters include a drain-source breakdown voltage of 65 V and a maximum junction temperature of 200 °C. In typical class-AB operation at 26 V supply and 180 mA quiescent current, it delivers 30 W PEP output power with greater than 10 dB gain and over 30% efficiency.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details and availability status. Ensure that the procurement channel provides valid traceability for this component type. Confirm compliance requirements such as RoHS status prior to finalizing orders. Cross-reference the manufacturer's latest datasheet to ensure the part number matches the required specifications for your design.
Select the BLF2045 for applications requiring 30 W output power within the 1.8 to 2.2 GHz band. The device requires a heatsink interface due to its flange-mounted source connection. Ensure the circuit design supports a 26 V supply and manages thermal resistance effectively. Verify that the load impedance matches the typical values provided in the application information for optimal performance.
This component belongs to the Ampleon (formerly Philips Semiconductors) UHF power LDMOS transistor family. It is engineered specifically for base station and broadcast driver applications. The BLF2045 utilizes lateral D-MOS technology encapsulated in a ceramic cap package. It represents a standard solution for high-power RF amplification in cellular communication infrastructure.
Consult the official Ampleon replacement guide or datasheet for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without rigorous testing. Verify pinout and thermal characteristics match before attempting any substitution.