BLF2324M8LS200PU

Overview

The BLF2324M8LS200P is a 200 W LDMOS power transistor designed for industrial applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 60 W under typical conditions. The device achieves a power gain of 17.2 dB and a drain efficiency of 32% at this power level. It features low thermal resistance (0.217 K/W) and integrated ESD protection. The transistor is internally matched, RoHS compliant, and housed in an earless flanged balanced ceramic package (SOT539B).

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch.
• High efficiency and low thermal resistance for superior thermal stability.
• Designed for broadband operation with lower output capacitance for Doherty applications.
• Low memory effects providing excellent pre-distortability.

Applications

• RF power amplifiers for industrial applications
• Multi-carrier applications in the 2300 MHz to 2400 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the application environment remains within the specified absolute maximum ratings, particularly regarding junction temperature and case temperature limits, to maintain device reliability and prevent permanent damage during continuous operation.

Selection Notes

Select this component for designs requiring high power output in the 2.3 GHz to 2.4 GHz band. Ensure the circuit design accommodates the internal matching network and utilizes the recommended test circuit components, such as Rogers RO4350B PCB material. Verify that the system can handle the required gate-source threshold voltage and provides adequate heat sinking to manage the thermal resistance from junction to case effectively.

Part Context

This part belongs to Ampleon's portfolio of power LDMOS transistors engineered for robust performance in demanding RF environments. It is specifically optimized for industrial use cases where high linearity and efficiency are critical. The device represents a mature product specification intended for production use in multi-carrier amplifier architectures operating within the designated microwave frequency spectrum.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without cross-referencing electrical specifications and pin configurations.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF2324M8LS200P can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified Class-AB operating conditions.

Is the device suitable for automotive applications?

No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and is not suitable for automotive equipment or applications.

What is the thermal resistance from junction to case?

The typical thermal resistance from junction to case is 0.217 K/W when measured at a case temperature of 80°C with an output power of 60 W.