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The Ampleon BLF242,112 is a silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. It operates with a drain-source voltage of up to 65 V and delivers an output power exceeding 5 W at 175 MHz under Class-B conditions. The device features high power gain greater than 13 dB and drain efficiency above 50%. Packaged in the SOT123A flange configuration with a ceramic cap, it includes gold metallization for reliability and withstands full load mismatch.
Verify the specific ordering suffix against official documentation to confirm package type and binning. Ensure compatibility with anti-static handling protocols due to electrostatic discharge sensitivity. Confirm that the mounting base interface matches the required heatsink specifications for optimal thermal performance during operation.
Select this component for designs requiring reliable HF/VHF power amplification with high gain. Consider the SOT123A flange package for effective heat dissipation via the mounting base. Evaluate the gate-source threshold voltage group requirements to ensure proper biasing alignment within the circuit design parameters.
This device belongs to the Ampleon portfolio of HF-VHF power MOS transistors. Originally developed under Philips Semiconductors, the product line was transferred to Ampleon in 2015. The BLF242 represents a specialized silicon LDMOS solution optimized for robust performance in demanding radio frequency environments.
Consult official substitution lists for verified equivalents. Generic replacements may not match the specific thermal resistance or mismatch ruggedness ratings required for professional transmitter applications.