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The BLF2425M6LS180P is a power LDMOS transistor designed for ISM and industrial heating applications in the 2400 MHz to 2500 MHz frequency range. It delivers an output power of 180 W with a drain efficiency of 53.5% and a power gain of 13.3 dB at 2450 MHz under class-AB operation (VDS = 28 V, IDq = 10 mA). The device features a maximum drain-source voltage of 65 V and a junction temperature rating of 225 °C. It utilizes an internally matched earless flanged balanced ceramic package (SOT539B) with four leads.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Ensure that the procurement channel provides valid traceability for this RF component. Confirm RoHS Directive 2002/95/EC compliance through the manufacturer's latest product data sheet before finalizing acquisition.
Select the BLF2425M6LS180P for broadband operations requiring high power density within the 2.4 GHz to 2.5 GHz spectrum. The internal matching network simplifies circuit design compared to non-matched variants. Evaluate thermal management requirements carefully, as the device operates up to a 225 °C junction temperature with a thermal resistance of 0.38 K/W from junction to case.
This component belongs to the BLF2425M6L series of power LDMOS transistors manufactured by Ampleon. The 'S' suffix denotes the earless flanged balanced ceramic package (SOT539B), which differs from the standard flanged version (SOT539A). These devices are engineered for robust performance in continuous wave (CW) transmission environments.
The BLF2425M6L180P serves as the primary functional equivalent within the same series, differing only in package configuration (SOT539A vs SOT539B). Verify pinout compatibility and mechanical mounting dimensions when substituting between these two package types.