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The BLF2425M7L100 is a 100 W LDMOS power transistor designed for industrial applications in the 2300 MHz to 2400 MHz frequency range. It features a drain-source voltage of 65 V and operates with a typical drain efficiency of 27% at 20 W output power under IS-95 conditions. The device provides a power gain of 18 dB and an adjacent channel power ratio of -46 dBc. It utilizes a flanged ceramic package (SOT502A) with a junction-to-case thermal resistance of 0.3 K/W, supporting a maximum junction temperature of 200 °C.
Verify the specific package variant required, as the datasheet covers both the flanged ceramic package with mounting holes (BLF2425M7L100) and the earless version (BLF2425M7LS100). Confirm that the application environment remains within the specified absolute maximum ratings, particularly regarding junction temperature and thermal management requirements for continuous wave operation.
Select this component for designs requiring 100 W output power in the 2.3 GHz to 2.4 GHz band. Ensure the circuit design accommodates the internal matching network and provides adequate heat sinking to maintain the case temperature within limits. Consider the device's ruggedness specifications if the application involves potential impedance mismatches or varying load conditions.
This part belongs to Ampleon's BLF2425 series of LDMOS transistors, which are optimized for broadband RF power amplifier applications. The series includes various power levels and package options tailored for different industrial and communication standards operating in the 2.4 GHz spectrum.
The BLF2425M7LS100 is the earless flanged ceramic package variant of this component. Verify mechanical fit and mounting hole availability when substituting between these two package versions.