BLF2425M7L100U

Overview

The BLF2425M7L100 is a 100 W LDMOS power transistor designed for industrial applications operating between 2300 MHz and 2400 MHz. It supports single carrier IS-95 with pilot, paging, sync, and six traffic channels (Walsh codes 8–13), featuring a peak-to-average ratio of 9.7 dB at 0.01% probability on the CCDF and a channel bandwidth of 1.2288 MHz. The device also handles 3GPP test model 1 with 64 DPCH, exhibiting a 7.2 dB peak-to-average ratio at 0.01% probability on the CCDF and a 3.84 MHz channel bandwidth.

Feature Summary

• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• High efficiency and low thermal resistance providing excellent thermal stability
• Designed for low memory effects to support digital pre-distortion capability
• Internally matched for ease of use with integrated ESD protection

Applications

• RF power amplifiers for industrial applications in the 2300 MHz to 2400 MHz frequency range
• Multi-carrier applications within the specified frequency band

Procurement Notes

Verify the specific package variant required for the design, as the BLF2425M7L100 corresponds to the SOT502A flanged ceramic package with mounting holes, while the BLF2425M7LS100 uses the SOT502B earless flanged package. Confirm RoHS compliance status and ensure sourcing from authorized Ampleon distributors to guarantee authenticity and access to current product data sheets.

Selection Notes

Select this component for designs requiring high linearity and ruggedness in the 2300 MHz to 2400 MHz band. Ensure the application circuit can maintain the recommended drain-source voltage of 28 V and quiescent current of 900 mA. Verify that the thermal management system can handle the junction-to-case thermal resistance of 0.3 K/W to maintain reliability under continuous wave or pulsed operation conditions.

Part Context

This part belongs to the BLF2425M7L series of power LDMOS transistors manufactured by Ampleon. The series includes variants such as the BLF2425M7LS100, which shares identical electrical characteristics but differs in physical packaging. These devices are engineered for robust performance in demanding RF environments, specifically targeting industrial and multi-carrier amplifier architectures.

Replacement Considerations

The BLF2425M7LS100 serves as a direct functional equivalent with identical electrical specifications, differing only in the SOT502B earless flanged ceramic package compared to the SOT502A package of the BLF2425M7L100. Substitution requires verification of mechanical fit and mounting hole alignment.