BLF2425M7L140,112

Overview

The BLF2425M7L140 is a Power LDMOS transistor designed for Industrial, Scientific and Medical (ISM) applications in the 2400 MHz to 2500 MHz frequency range. It delivers 140 W output power with 18.5 dB gain and 52% drain efficiency at 28 V supply voltage. The device features a 65 V drain-source breakdown voltage, 69 mΩ on-state resistance, and a junction temperature rating of 225 °C. Thermal resistance from junction to case is 0.28 K/W. It is available in flanged ceramic packages SOT502A and SOT502B.

Feature Summary

• High efficiency and high power gain for continuous wave applications
• Excellent ruggedness capable of withstanding VSWR = 10:1 mismatch
• Integrated ESD protection for enhanced operational stability
• Internally matched design simplifies circuit integration

Applications

• Industrial, scientific and medical applications in the 2400 MHz to 2500 MHz band

Procurement Notes

Verify the specific package variant required for the application, as the BLF2425M7L140 designation corresponds to the SOT502A flanged package with mounting holes, while the BLF2425M7LS140 denotes the earless SOT502B version. Confirm RoHS compliance status through official Ampleon channels prior to procurement.

Selection Notes

Select this component for high-power ISM applications requiring robust performance in the 2.4 GHz to 2.5 GHz spectrum. Ensure the thermal management system can maintain the case temperature within limits to support the specified 140 W output. Verify that the load impedance matches the typical values provided for optimal gain and efficiency.

Part Context

This part belongs to the BLF2425M7 series of LDMOS transistors manufactured by Ampleon. The series includes variants such as the BLF2425M7LS140, which shares identical electrical specifications but utilizes an earless flanged ceramic package (SOT502B). Both versions are optimized for CW operation in industrial and medical bands.

Replacement Considerations

The BLF2425M7LS140 serves as a direct functional substitute with identical RF and DC characteristics, differing only in the physical package configuration (earless vs. flanged with mounting holes).