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The BLF2425M7LS100 is a 100 W LDMOS power transistor designed for industrial applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 900 mA, delivering an average output power of 100 W. The device provides a typical power gain of 18 dB and a drain efficiency of 27% under continuous wave conditions. It features a thermal resistance from junction to case of 0.3 K/W and supports a maximum junction temperature of 200 °C. The component utilizes an internally matched design and includes integrated ESD protection.
Verify the specific package variant required for the application. The BLF2425M7L100 uses the SOT502A flanged ceramic package with mounting holes, while the BLF2425M7LS100 uses the SOT502B earless flanged ceramic package. Confirm that the ordering suffix matches the desired physical package configuration before procurement.
Select this component for designs requiring high ruggedness and high efficiency in the 2300 MHz to 2400 MHz band. Ensure the thermal management system can maintain the case temperature within limits to support the specified 100 W output power. Verify compatibility with the SOT502B earless flanged package dimensions if using the LS100 variant.
This part belongs to the Ampleon BLF2425M7L series of power LDMOS transistors. The series includes variants such as the BLF2425M7L100 (SOT502A) and the BLF2425M7LS100 (SOT502B). These devices are engineered for robust performance in industrial RF power amplifier applications operating between 2300 MHz and 2400 MHz.
The BLF2425M7L100 serves as a direct functional equivalent with a different package (SOT502A vs SOT502B). No other public substitute part numbers are documented.