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The BLF2425M7LS140,112 is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. Designed for broadband applications in the 2.4 GHz to 2.5 GHz frequency range, this component delivers a typical output power of 140 W with a gain of 19 dB at a drain voltage of 28 V. It features a low on-resistance of 69 mOhms and supports a maximum operating temperature of +225 °C. The device utilizes an SOT502B-3 surface-mount package, ensuring efficient thermal management and reliable performance in high-power radio frequency amplifier circuits.
Verify the complete part number including the trailing suffix against official Ampleon documentation to ensure correct packaging and binning specifications. Confirm RoHS compliance status and check for any specific handling requirements related to the SOT502B-3 surface mount package during assembly processes.
Select this component for designs requiring 140 W output power within the 2.4–2.5 GHz band. Ensure the circuit design accommodates the 28 V drain voltage requirement and provides adequate heat sinking for the SOT502B-3 package to maintain junction temperatures within the specified operational limits.
This transistor belongs to the BLF2425 series, which focuses on broadband LDMOS solutions for industrial and medical frequencies. It shares architectural similarities with other Ampleon devices like the BLF2425M9LS140U but differs in channel configuration and specific electrical characteristics tailored for dual-channel efficiency.
Direct substitutes include the BLF2425M9LS140U for single-channel applications with similar power ratings. Verify pin compatibility and thermal resistance values before replacing the dual-channel BLF2425M7LS140,112 with alternative models in existing board layouts.