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The BLF2425M8L140U is a power LDMOS transistor designed for Industrial, Scientific and Medical (ISM) applications in the 2400 MHz to 2500 MHz frequency range. It delivers 140 W output power with 19 dB gain and 56% drain efficiency at VDS = 28 V and IDq = 1300 mA. The device features a 65 V drain-source voltage rating and a junction temperature limit of 225 °C. Thermal resistance from junction to case is 0.28 K/W. It is housed in a flanged ceramic SOT502A package.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the exact package variant. The 'U' designation typically indicates a specific tape-and-reel or tray packaging configuration distinct from standard bulk versions. Confirm RoHS compliance status and ensure the component matches the required thermal management specifications for the target application environment.
Select this component for high-power continuous wave applications requiring robust performance in the ISM band. Ensure the design accommodates the 65 V drain-source voltage limit and provides adequate heat sinking to maintain the junction temperature below 225 °C. Verify that the circuit impedance matches the typical values provided for optimal power transfer and efficiency.
This part belongs to the Ampleon BLF2425M8 series of power LDMOS transistors. It shares core electrical characteristics with the BLF2425M8LS140 but differs in physical package construction. The series is engineered for demanding RF power amplification tasks where reliability and thermal stability are critical operational requirements.
The BLF2425M8LS140 serves as a direct functional equivalent within the same product family. Selection between these variants depends primarily on the required mechanical mounting style and package outline dimensions rather than electrical performance differences.