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The BLF2425M9LS30J is a 30 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 2400 MHz and 2500 MHz. It utilizes an earless flanged ceramic package (SOT1135B). At 2450 MHz with VDS = 32 V and IDq = 20 mA, it delivers 30 W output power with 18.5 dB gain and 61% drain efficiency. The device supports a maximum junction temperature of 225 °C and features integrated ESD protection.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations or handling specifications. Ensure procurement channels provide valid traceability and authenticity certificates. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to finalizing orders.
Select this component for high-power CW driver stages requiring robust thermal stability and high gain within the ISM band. Evaluate the SOT1135B earless flanged package constraints for mechanical mounting and RF impedance matching networks. Verify that the application design accommodates the specified 65 V drain-source voltage limit and 225 °C junction temperature capability.
This part belongs to the BLF2425M9L30/M9LS30 family of power LDMOS transistors manufactured by Ampleon. The 'LS' designation indicates the earless flanged ceramic package variant (SOT1135B), distinguishing it from the standard flanged version (SOT1135A). These devices are engineered specifically for demanding ISM applications requiring high reliability.
The BLF2425M9L30 serves as the primary functional equivalent within the same datasheet, differing primarily in the SOT1135A flanged package configuration rather than electrical performance.