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The BLF246,112 is a VHF power MOS transistor manufactured by Ampleon USA Inc. It is a silicon N-channel enhancement mode vertical D-MOS device housed in a 4-lead SOT121B flange package with a ceramic cap. The component operates at a drain-source voltage of 65 V and delivers an output power of 80 W at 108 MHz in Class-B operation. Key electrical parameters include a minimum power gain of 16 dB, a maximum DC drain current of 13 A, and a total power dissipation of 130 W at 25 °C ambient temperature.
Verify the specific ordering suffix to ensure correct packaging and batch specifications. Confirm RoHS compliance status as indicated on the official datasheet. Check for any Customer Product/Process Change Notifications (CPCN) that may affect physical dimensions or electrical characteristics prior to final design integration.
Select this component for VHF band designs requiring robust mismatch tolerance. Ensure the thermal management system maintains the mounting base temperature within specified limits to achieve the rated 130 W power dissipation. Verify gate-source voltage group markings if matched pair configurations are required for the application.
This part belongs to the Ampleon VHF power transistor portfolio, originally developed under Philips Semiconductors. The BLF246 utilizes vertical D-MOS technology optimized for high-power linear and non-linear amplification in the VHF spectrum. It represents a transition point where Ampleon assumed responsibility for RF power products previously managed by NXP Semiconductors.
Consult the official Ampleon replacement guide for direct equivalents. Verify pinout compatibility and thermal resistance values when substituting with other VHF transistors from different manufacturers.