BLF246B,112

Overview

The Ampleon BLF246B,112 is a dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for VHF frequency range applications. Encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap, the device features gold metallization for reliability and isolated leads. It operates at a drain-source voltage of 65 V and delivers 60 W output power at 175 MHz with greater than 14 dB gain and over 55% efficiency in Class-AB operation. The component includes beryllium oxide thermal management and requires careful handling due to toxic material content.

Feature Summary

• Dual-section push-pull architecture optimized for large signal VHF applications
• Gold metallization structure ensuring high operational reliability
• Integrated beryllium oxide thermal dissipation within a balanced flange package

Applications

• Large signal amplification in the VHF frequency range
• VHF broadcast transmitter stages
• Industrial, scientific, and medical (ISM) equipment RF generation

Procurement Notes

Verify the specific ordering suffix matches the required binning group, as gate-source threshold voltage limits vary by category. Confirm compliance with RoHS directives and REACH regulations before procurement. Ensure anti-static packaging integrity is maintained during transport. Check for updated datasheet revisions to confirm current product status and any potential design changes affecting pinout or electrical characteristics.

Selection Notes

Select this component for designs requiring high power gain and ruggedness in VHF push-pull configurations. Evaluate thermal resistance requirements carefully, as the junction-to-mounting base resistance is 1.35 K/W. Ensure the application circuit can handle the specified load mismatch conditions, supporting a VSWR of 50:1 through all phases. Verify that the operating frequency aligns with the optimal performance window around 175 MHz for maximum efficiency.

Part Context

Originally developed under Philips Semiconductors, the BLF246B was transferred to Ampleon following the spin-off of the RF Power division in December 2015. This transition involved updating documentation references and contact details while maintaining the original technical specifications. The part remains a established solution for VHF power amplification, retaining its historical designation within the manufacturer's portfolio.

Replacement Considerations

No direct public substitute part numbers are documented in the provided source material. Designers should consult official Ampleon channels for cross-reference recommendations based on specific VHF power and frequency requirements.

FAQ

What safety precautions are required for handling the BLF246B?

The device contains beryllium oxide (BeO). It must be handled without damaging the BeO disc. Disposal must follow chemical or special waste regulations and never be mixed with general domestic waste.

How does the gate-source threshold voltage vary?

The threshold voltage is categorized into groups ranging from Group A (2.0–2.1 V) to Group Z (4.4–4.5 V). Selection depends on the specific biasing requirements of the amplifier circuit.

What is the maximum load mismatch the device can withstand?

In Class-B operation at 175 MHz and 28 V, the BLF246B can withstand a load mismatch corresponding to a VSWR of 50:1 through all phases at rated output power.