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The BLF25M612G,112 is a 12 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications operating between 2400 MHz and 2500 MHz. It is assembled in an earless flanged ceramic package (SOT975C). At 28 V drain-source voltage and 10 mA quiescent current, it delivers 12 W output power with 19 dB gain and 60% drain efficiency at 2450 MHz. The device withstands a VSWR of 10:1 through all phases and features integrated ESD protection.
Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status as per the latest manufacturer documentation. Ensure handling procedures adhere to electrostatic discharge standards during installation.
Select based on the required output power and frequency band within the ISM spectrum. Consider thermal management requirements given the junction-to-case thermal resistance. Verify compatibility with the intended class-AB operation conditions.
This component belongs to Ampleon's portfolio of RF power transistors utilizing LDMOS technology. It serves as a driver stage for high-power continuous wave applications in the specified microwave frequency range.
The BLF25M612 is the non-RoHS compliant equivalent using the SOT975B package. Verify pinout and mechanical dimensions when substituting between the G and non-G variants.
The absolute maximum rating for drain-source voltage is 65 V.
No, this product is not automotive qualified and should not be used in automotive equipment or applications.
It can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 10:1 through all phases under specified test conditions.