BLF25M612G,118

Overview

The BLF25M612G,118 is a 12 W LDMOS power transistor designed for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. It operates with a drain-source voltage of 28 V and delivers 12 W output power in continuous wave mode. The device features high efficiency and power gain, with typical values of 60% drain efficiency and 19 dB power gain at 2450 MHz. It is housed in an earless flanged ceramic package (SOT975C) and includes integrated ESD protection.

Feature Summary

• High efficiency and high power gain
• Excellent ruggedness and thermal stability
• Integrated ESD protection
• Designed for broadband operation

Applications

• Industrial, scientific and medical applications in the frequency range 2400 MHz to 2500 MHz

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package variant selection. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure all handling procedures strictly follow electrostatic discharge precautions as outlined in the product data sheet.

Selection Notes

Select this component for high-power CW driver stages operating within the 2400 MHz to 2500 MHz band. Ensure the application circuit maintains a load mismatch tolerance of VSWR = 10:1 through all phases. Verify that the thermal management system can maintain the junction temperature below 225 °C under maximum operating conditions.

Part Context

This part belongs to the Ampleon BLF25M612 series of LDMOS power transistors. The 'G' suffix indicates the SOT975C package variant, which differs physically from the standard BLF25M612 (SOT975B). Both variants share identical electrical specifications and are intended for ISM band applications.

Replacement Considerations

The BLF25M612 serves as the direct non-lead-free equivalent. Substitution requires verifying package compatibility between SOT975B and SOT975C footprints.