BLF346,112

BLF346,112

  • Description:RF MOSFET 28V CDFM6
  • Series:-

SKU:172846a560a8 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:224.25MHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):13A
  • Noise Figure:-
  • Current - Test:3:00 AM
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-119A
  • Supplier Device Package:CDFM6
  • Configuration:N-Channel

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BLF346,112

Overview

The BLF346 is a VHF power MOS transistor manufactured by Ampleon USA Inc. It is an N-channel enhancement mode vertical D-MOS device housed in a SOT119A flange package with a ceramic cap. The component operates at a drain-source voltage of 28 V and a drain current of 3 A, delivering over 24 W of output power with a gain exceeding 14 dB at 224.25 MHz. Key electrical parameters include a breakdown voltage of 65 V, a threshold voltage range of 2 to 4.5 V, and a thermal resistance from junction to mounting base of 1.35 K/W.

Feature Summary

  • High power gain suitable for linear amplifier applications
  • Gold metallization ensures excellent reliability
  • Good thermal stability with easy power control

Applications

  • Linear amplifiers in television transmitters
  • Television transposers

Procurement Notes

Verify the specific gate-source voltage group indicator required for matched pair applications, as the datasheet provides multiple letter-coded groups (A through Z). Confirm that the handling procedures account for the beryllium oxide content within the ceramic cap, ensuring compliance with local chemical waste disposal regulations during installation or end-of-life processing.

Selection Notes

Select this component for VHF band linear amplification where high power gain and ruggedness are critical. Ensure the design accommodates the specified thermal resistance and allows for proper heatsinking to maintain the junction temperature within the 200 °C limit. Verify that the load impedance matches the typical values provided for Class-A operation to achieve the rated output power and distortion performance.

Part Context

The BLF346 belongs to the VHF power MOS transistor family originally developed by Philips Semiconductors. Following the corporate restructuring on December 7, 2015, the RF Power division became Ampleon, which now manages the product line. This transistor represents a legacy silicon technology optimized for broadcast applications, distinct from newer broadband or microwave frequency devices offered by the manufacturer.

Replacement Considerations

No public confirmed substitute part numbers are available in the source documentation.

BLF346,112BLF346,112

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