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The BLF346 is a VHF power MOS transistor manufactured by Ampleon USA Inc. It is an N-channel enhancement mode vertical D-MOS device housed in a SOT119A flange package with a ceramic cap. The component operates at a drain-source voltage of 28 V and a drain current of 3 A, delivering over 24 W of output power with a gain exceeding 14 dB at 224.25 MHz. Key electrical parameters include a breakdown voltage of 65 V, a threshold voltage range of 2 to 4.5 V, and a thermal resistance from junction to mounting base of 1.35 K/W.
Verify the specific gate-source voltage group indicator required for matched pair applications, as the datasheet provides multiple letter-coded groups (A through Z). Confirm that the handling procedures account for the beryllium oxide content within the ceramic cap, ensuring compliance with local chemical waste disposal regulations during installation or end-of-life processing.
Select this component for VHF band linear amplification where high power gain and ruggedness are critical. Ensure the design accommodates the specified thermal resistance and allows for proper heatsinking to maintain the junction temperature within the 200 °C limit. Verify that the load impedance matches the typical values provided for Class-A operation to achieve the rated output power and distortion performance.
The BLF346 belongs to the VHF power MOS transistor family originally developed by Philips Semiconductors. Following the corporate restructuring on December 7, 2015, the RF Power division became Ampleon, which now manages the product line. This transistor represents a legacy silicon technology optimized for broadcast applications, distinct from newer broadband or microwave frequency devices offered by the manufacturer.
No public confirmed substitute part numbers are available in the source documentation.