BLF368,112

Overview

The BLF368,112 is a VHF push-pull power MOS transistor manufactured by Ampleon USA Inc. It is a dual silicon N-channel enhancement mode vertical D-MOS device designed for broadcast transmitter applications in the VHF frequency range. The component utilizes a 4-lead SOT262A1 balanced flange package with two ceramic caps and features gold metallization for reliability. In Class-AB CW operation at 225 MHz with a drain-source voltage of 32 V, it delivers 300 W output power with typical gain of 13.5 dB and efficiency of 62%. Limiting values include a maximum drain-source voltage of 65 V, gate-source voltage of ±20 V, and total power dissipation of 500 W.

Feature Summary

• Dual push-pull configuration with common source connection via mounting flange
• Gold metallization ensures excellent reliability
• Good thermal stability with low thermal resistance from junction to mounting base
• Easy power control characteristics

Applications

• Broadcast transmitter applications in the VHF frequency range
• Class-AB RF power amplification
• Television broadcasting systems

Procurement Notes

Verify the specific ordering suffix and manufacturing date code upon procurement. Confirm that the component matches the SOT262A1 flange package outline dimensions. Ensure handling procedures account for the beryllium oxide content in the ceramic caps, requiring disposal as chemical waste. Check for any Customer Product/Process Change Notifications (CPCN) related to this part number before finalizing design integration.

Selection Notes

Select the BLF368 for VHF broadcast applications requiring high power output and robust thermal performance. Ensure the design supports Class-AB operation with appropriate biasing networks. Verify that the heatsink interface can maintain the required thermal resistance from mounting base to heatsink. Consider the input and output impedance matching requirements at the target operating frequency, typically around 225 MHz for optimal performance.

Part Context

The BLF368 belongs to the family of VHF push-pull power MOS transistors from Ampleon. It was originally developed under Philips Semiconductors and transferred to Ampleon in 2015. The device is characterized by its dual-section architecture, allowing for balanced push-pull configurations to minimize even-order harmonics. It is distinct from single-ended LDMOS devices due to its specific pinout and internal symmetry.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.