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Product Detailed Parameters
- Description：RF MOSFET LDMOS 26V SOT467C
- Series：-
- Mfr：Ampleon USA Inc.
- Package：Tray
- Technology：LDMOS
- Frequency：2GHz
- Gain：13.5dB
- Voltage - Test：26 V
- Current Rating (Amps)：4.5A
- Noise Figure：-
- Current - Test：450 mA
- Power - Output：30W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-467C
- Supplier Device Package：SOT467C
- Configuration：-
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Overview
The BLF3G21-30 is a UHF power LDMOS transistor designed for base station applications across the HF to 2200 MHz frequency range. It operates with a drain-source voltage of 65 V and delivers up to 36 W in CW mode at 2000 MHz. The device features high power gain, excellent back-off linearity, and ruggedness capable of withstanding a VSWR of 10:1. Packaged in the flanged SOT467C ceramic housing, it supports broadband operation without internal matching networks.
Feature Summary
- Designed for broadband RF power amplification from HF to 2200 MHz
- Features excellent back-off linearity and high power gain
- Capable of withstanding severe load mismatches (VSWR 10:1)
- Includes integrated ESD protection
Applications
- RF power amplifiers for GSM, PHS, EDGE, CDMA, and W-CDMA base stations
- Multicarrier applications within the HF to 2200 MHz range
- Broadcast drivers
Procurement Notes
Verify the specific ordering suffix against official Ampleon documentation to confirm package version and compliance status. Confirm current product status as datasheets may indicate obsolescence or lifecycle changes. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and installation.
Selection Notes
Select this component for designs requiring robust performance in linear amplifier classes such as Class-AB and Class-A. Verify thermal management capabilities against the specified junction-to-case resistance values. Ensure the application circuit accommodates the lack of internal matching networks required for its broadband operational characteristics.
Part Context
This part belongs to the BLF3G21 series of UHF power LDMOS transistors manufactured by Ampleon USA Inc. It utilizes the SOT467C flanged ceramic package, which provides mechanical stability and efficient heat dissipation through the mounting flange. The device represents a continuation of technology previously associated with NXP Semiconductors.
Replacement Considerations
Consult official Ampleon substitution guides for verified replacements. Cross-reference pinout configurations and thermal resistance specifications when evaluating alternative components to ensure compatibility with existing PCB layouts and heatsinking infrastructure.
FAQ
What is the maximum Voltage Standing-Wave Ratio (VSWR) the device can withstand?
The BLF3G21-30 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under rated load power conditions.
Does the BLF3G21-30 include internal matching networks?
No, the device is designed for broadband operation without internal matching networks.
What is the typical power gain at 2000 MHz in two-tone operation?
The typical power gain is 13.5 dB when operating in two-tone mode at 2000 MHz with a peak envelope load power of 30 W.
