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The BLF3G21-6 is a 6 W LDMOS power transistor designed for base station applications across the HF to 2200 MHz frequency range. It operates with a drain-source voltage of 26 V and features a ceramic surface-mounted SOT538A package. In class-AB operation at 2000 MHz, it delivers 7 W CW output power with 12.5 dB gain and 43% efficiency. Under PHS conditions at 1900 MHz, it provides 2 W average output power with 16 dB gain and 20% efficiency. The device exhibits excellent back-off linearity, high ruggedness, and thermal stability.
Verify the specific ordering suffix against the manufacturer's current catalog to confirm availability and packaging details. Confirm that the component meets RoHS compliance requirements for your region. Ensure proper ESD handling protocols are followed during transport and assembly due to the device's sensitivity to electrostatic discharge.
Select this component for designs requiring a single-transistor solution for UHF to 2 GHz broadband amplification. Consider the SOT538A package dimensions for PCB layout constraints. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for the intended power levels and operating temperatures.
This part belongs to Ampleon's UHF power LDMOS transistor portfolio, specifically engineered for cellular infrastructure. It serves as a building block for linear RF power amplifiers in mobile communication networks. The technology leverages laterally diffused metal-oxide semiconductor processes to achieve high linearity and efficiency in compact packages.
Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models based on similar naming conventions or general specifications.