BLF3G21-6,112

BLF3G21-6,112

  • Description:RF MOSFET LDMOS 26V 2CSMD
  • Series:-

SKU:5108d6d00ac0 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V 2CSMD
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2GHz
  • Gain:15.5dB
  • Voltage - Test:26 V
  • Current Rating (Amps):2.3A
  • Noise Figure:-
  • Current - Test:90 mA
  • Power - Output:6W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-538A
  • Supplier Device Package:2-CSMD
  • Configuration:-

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BLF3G21-6,112

Overview

The BLF3G21-6 is a 6 W LDMOS power transistor designed for base station applications across the HF to 2200 MHz frequency range. It operates with a drain-source voltage of 26 V and features a ceramic surface-mounted SOT538A package. In class-AB operation at 2000 MHz, it delivers 7 W CW output power with 12.5 dB gain and 43% efficiency. Under PHS conditions at 1900 MHz, it provides 2 W average output power with 16 dB gain and 20% efficiency. The device exhibits excellent back-off linearity, high ruggedness, and thermal stability.

Feature Summary

  • Designed for broadband operation from HF to 2200 MHz without internal matching
  • Features excellent back-off linearity and high power gain
  • Provides excellent thermal stability and easy power control
  • Includes ESD protection and demonstrates excellent ruggedness

Applications

  • RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations
  • Multicarrier applications in the HF to 2200 MHz frequency range
  • Broadcast drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm availability and packaging details. Confirm that the component meets RoHS compliance requirements for your region. Ensure proper ESD handling protocols are followed during transport and assembly due to the device's sensitivity to electrostatic discharge.

Selection Notes

Select this component for designs requiring a single-transistor solution for UHF to 2 GHz broadband amplification. Consider the SOT538A package dimensions for PCB layout constraints. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for the intended power levels and operating temperatures.

Part Context

This part belongs to Ampleon's UHF power LDMOS transistor portfolio, specifically engineered for cellular infrastructure. It serves as a building block for linear RF power amplifiers in mobile communication networks. The technology leverages laterally diffused metal-oxide semiconductor processes to achieve high linearity and efficiency in compact packages.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models based on similar naming conventions or general specifications.

BLF3G21-6,112BLF3G21-6,112

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