BLF4G20S-110B,112

Overview

The BLF4G20S-110B is a 110 W LDMOS power transistor designed for base station applications operating between 1800 MHz and 2000 MHz. It features an earless flanged SOT502B ceramic package with two leads. The device supports a maximum drain-source voltage of 65 V and a junction temperature up to 200 °C. Typical performance at 1930 MHz to 1990 MHz includes a gain of 13.8 dB, efficiency of 38.5%, and ACPR values of -61 dBc (400 kHz) and -74 dBc (600 kHz). Thermal resistance from junction to case ranges from 0.65 K/W to 0.85 K/W depending on load power.

Feature Summary

• Internally matched for ease of use
• Designed for broadband operation across the 1800 MHz to 2000 MHz frequency range
• Capable of withstanding high load mismatch conditions in class-AB operation
• Provides excellent thermal stability and ruggedness

Applications

• RF power amplifiers for GSM base stations
• RF power amplifiers for GSM EDGE base stations
• RF power amplifiers for CDMA base stations
• Multicarrier applications in the 1800 MHz to 2000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm package variant and compliance status. Confirm that the component meets all absolute maximum rating limits during design integration. Ensure proper electrostatic discharge handling protocols are followed during transport and assembly due to device sensitivity.

Selection Notes

Select this component for UHF band base station designs requiring high linearity and efficiency. The internal matching simplifies circuit design compared to unmatched devices. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under expected load conditions.

Part Context

This device belongs to the BLF4G20 series of UHF power LDMOS transistors manufactured by NXP USA Inc., formerly Philips Semiconductors. The series includes variants such as the BLF4G20-110B, which differs primarily in package configuration. These components are engineered specifically for demanding RF power amplifier applications in wireless communication infrastructure.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinout configurations and package dimensions when considering alternative packages within the same electrical specification family.