BLF546,112

Overview

The BLF546,112 is a silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for UHF communications transmitter applications. It operates in the 0.5 GHz range with a drain-source voltage of 28 V and delivers 80 W of output power per section in Class-B CW operation. The device features high power gain exceeding 11 dB and drain efficiency greater than 50%. Packaged in a 4-lead SOT268A balanced flange configuration with two ceramic caps, it provides excellent thermal stability and ruggedness against load mismatches.

Feature Summary

• Push-pull architecture enabling broadband UHF operation
• High power gain and efficient signal amplification
• Robust thermal stability and mismatch tolerance
• Gold metallization for enhanced reliability

Applications

• UHF communications transmitters
• Broadband RF power amplification
• Class-B linear amplifier stages

Procurement Notes

Verify component authenticity through official Ampleon channels or authorized distributors. Confirm RoHS compliance status and check for specific gate-source threshold voltage group codes (A-Z) required for circuit matching. Ensure handling procedures account for beryllium oxide content in the ceramic package to maintain safety standards during installation and disposal.

Selection Notes

Select this component for UHF applications requiring push-pull topology and high linearity. Evaluate thermal resistance requirements, noting the junction-to-mounting base value of 1.2 K/W. Consider the specific gate-source voltage group limits for bias network design. Ensure the mounting base temperature does not exceed specified limits to maintain performance and longevity.

Part Context

Originally developed by Philips Semiconductors, this part was transferred to Ampleon following the spin-off of the RF Power division in December 2015. The datasheet retains original Philips documentation structures while reflecting Ampleon's current branding and contact information. It represents a legacy UHF power solution within the broader portfolio of RF MOS transistors.

Replacement Considerations

No direct public substitute part numbers are documented in the provided source material. Designers should consult Ampleon technical support for equivalent devices with similar push-pull configurations and UHF frequency coverage.