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The BLF573S,112 is a 300 W LDMOS RF power transistor designed for broadcast and industrial applications within the HF to 500 MHz band. It operates with a drain-source voltage of 50 V and features an SOT502B earless flanged ceramic package. At 225 MHz, it delivers 300 W output power with 27.2 dB gain and 70% efficiency. The device includes integrated ESD protection and exhibits excellent ruggedness, supporting a VSWR of 13:1 through all phases.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status and check for any regional distribution restrictions or supply limitations before finalizing procurement plans.
Select this component for designs requiring high power density in the HF/VHF spectrum. Ensure the application circuit supports the specified 50 V drain voltage and provides adequate heat sinking to manage the junction-to-case thermal resistance during continuous wave operation.
This part belongs to the Ampleon BLF573 series of LDMOS transistors. The BLF573S variant specifically utilizes the SOT502B earless flanged package, distinguishing it from the standard BLF573 which uses the SOT502A flanged package with mounting holes.
The BLF573 serves as the primary functional equivalent. Verify that the target application can accommodate the mechanical differences between the SOT502B (BLF573S) and SOT502A (BLF573) packages.
The BLF573S can withstand a load mismatch corresponding to a VSWR of 13:1 through all phases under specified operating conditions.
The BLF573S uses the SOT502B earless flanged ceramic package, whereas the BLF573 uses the SOT502A flanged package which includes two mounting holes.