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The BLF574XR,112 is a 600 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 500 MHz band. It utilizes Ampleon's XR process to provide maximum ruggedness capability without compromising RF performance. At 225 MHz with a 50 V supply and 100 mA quiescent current, it delivers 600 W output power with 23.5 dB gain and 74.5% drain efficiency. The device features a 110 V drain-source breakdown voltage, a junction-to-case thermal resistance of 0.18 K/W, and an input capacitance of 210 pF.
Verify the specific ordering suffix against official documentation to confirm package variant. The BLF574XR corresponds to the SOT1214A flanged ceramic package with mounting holes, while the BLF574XRS denotes the earless SOT1214B variant. Ensure compatibility with system requirements before procurement.
Select this component for high-power RF designs requiring robust load mismatch tolerance. It supports class-AB operation with VSWR greater than 65:1 through all phases at 225 MHz. Designers must account for the 0.18 K/W thermal resistance and ensure adequate heat sinking to maintain junction temperature within limits.
This part is an enhanced version of the BLF574, leveraging Ampleon's XR technology to improve ruggedness. It belongs to the BLF574 family of power LDMOS transistors. The device is manufactured by Ampleon USA Inc. and is intended for use in demanding RF power amplifier circuits.
The standard BLF574 serves as the baseline predecessor. For direct pin-compatible substitution with different mechanical mounting requirements, consider the BLF574XRS which utilizes the SOT1214B earless flanged ceramic package.